Abstract
This research focuses on the measured reflection and transmission characteristics of the 6H polytype of silicon carbide through a range of wavelengths for the R-branch around 10.6 micrometers and the P-branch around 9.4 micrometers using a carbon dioxide laser. Quantum selection rules dictate the available output lines relating to the rotational energy transitions generating the obtainable output spectra. These lines delimit the span of accessible output power levels, each relating to a distinctive percentage of energy absorption and therefore a distinctive temperature of the silicon carbide wafer. The aim of this research is to find the optimal wavelength(s) for maximum heat flux absorbed by the wafer capable of generating a target temperature for carbon dioxide laser induced heteroepitaxial synthesis of graphene on silicon carbide.
How to Cite
Gregory, W., Rickard, A. & Morris, R., (2014) “Optical Properties of 6H Silicon Carbide Around 10.6μm and 9.4μm Via Carbon Dioxide Laser Ablation”, Capstone, The UNC Asheville Journal of Undergraduate Scholarship 27(2).
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